2012/09/17 ver.2 page 1 sp n2038 n-channel enhancement mode mosfet description applications the SPN2038 is the n- channel logic enhancement mode power field effect transistor which is produced wit h high cell density dmos trench technology. the SPN2038 has been designed specifically to improve the overall efficiency of dc /dc converters using either synchronous or conventional switching pwm controllers. it has b een optimized for low gate charge, low r ds(on) and fast switching speed. power management in note book powered system dc/dc converter load switch features pin configuration to-252 part marking 20v/14a, r ds(on) = 16m ? @v gs =4.5v 20v/7a,r ds(on) = 22m ? @v gs =2.5v super high density cell design for extremely low rds (on) exceptional on-resistance and maximum dc current capability
2012/09/17 ver.2 page 2 sp n2038 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN2038t252rgb to-252 SPN2038 SPN2038t252rgb : tape reel ; pb C free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate Csource voltage v gss 16 v t c =25 28 continuous drain current t c =100 i d 18 a pulsed drain current i dm 70 a power dissipation t c =25 p d 25 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to case r jc 5 /w
2012/09/17 ver.2 page 3 sp n2038 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.5 1.2 v gate leakage current i gss v ds =0v,v gs =16v 100 na v ds =16v,v gs =0v 1 zero gate voltage drain current i dss v ds =16v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds 5v,v gs =4.5v 28 a v gs = 4.5v,i d =14a 0.016 0.02 drain-source on-resistance r ds(on) v gs =2.5v,i d =7a 0.022 0.028 ? forward transconductance gfs v ds =5v,i d =14a 30 s diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g 9.8 gate-source charge q gs 2.1 gate-drain charge q gd v ds =15v, v gs =4.5v i d = 14a 3 nc input capacitance c iss 772 output capacitance c oss 83 reverse transfer capacitance c rss v ds =15, v gs =0v f=1mhz 79 pf t d(on) 4 turn-on time t r 12.5 t d(off) 20 turn-off time t f v dd =10v, i d 14a, v gs =4.5v, r g =3.3 ? 8 ns
2012/09/17 ver.2 page 4 sp n2038 n-channel enhancement mode mosfet typical characteristics fig. 1 typical output characteristics fig. 2 on-resistance vs gate voltage fig. 3 forward characteristics fig. 4 total ga te charge fig. 5 vgs vs temperature fig. 6 rdson vs temperature
2012/09/17 ver.2 page 5 sp n2038 n-channel enhancement mode mosfet typical characteristics fig. 7 capacitance vs vds fig. 8 safe operat ion region fig. 9 maximum transient thermal impedance fig. 10 switching time waveform fig. 11 gat e charge waveform
2012/09/17 ver.2 page 6 sp n2038 n-channel enhancement mode mosfet to-252 package outline
2012/09/17 ver.2 page 7 sp n2038 n-channel enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2012 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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